CuCl^+注入α-Al_2O_3晶体退火后表面亚微米颗粒的形成情况研究

Formation of Sub-μm Particles in the CuCl^+ Implanted α-Al_2O_3 Crystal after Annealing

CuC l+离子注入不同晶向的α-A l2O3晶体中,对在还原气氛下退火后的试样进行SEM表面观察。结果发现,不同注入条件和不同温度退火的不同晶向α-A l2O3晶体表面均形成弥散的亚微米颗粒。说明CuC l+离子注入α-A l2O3晶体产生的缺陷损伤在退火过程中,单个分散的带电色心缺陷与CuC l+离子形成的缺陷缔合体在恢复过程中发生了CuC l原子的偏聚,随着退火时间的增加,偏聚程度提高而形成颗粒,并逐渐长大形成亚微米颗粒。颗粒的大小和分布随注入条件以及退火温度不同而不同。

α-Al2O3 with different orientations were implanted with CuCl^＋ ions, then annealed in reducing atmosphere at different temperature. These samples were analyzed under SEM. It is found that sub-μm particles appeared on the surface of the sampies. The defects produced by ion implantation segregate during annealing process, where single color centre combining with CuCl^＋ ion forms defect complex leading to the segregation of CuCl^＋ ions. With prolongation of annealing time, the degree of segregation becomes high resulting in the formation of sub - μm particles. The size and distribution of these particles depends on ion implantation conditions and annealing temperature.