Nd掺杂对ZnO薄膜结构及室温光致发光特性的影响

Effect of neodymium content on structure and RT photoluminescence properties of doped ZnO thin films

通过射频磁控溅射技术在Si(111)衬底上制备了不同含量的Nd掺杂ZnO薄膜.XRD和AFM分析表明,Nd掺杂没有改变ZnO薄膜的结构,薄膜为纳米多晶结构,未掺杂ZnO沿c择优生长.Nd掺杂使ZnO薄膜表面粗糙,起伏较大,薄膜中随Nd掺杂量的增加颗粒减小.室温光致发光谱显示,薄膜出现了395nm的强紫光峰和495nm的弱绿光峰,同时,Nd掺杂不改变PL谱的峰位置,Nd含量对PL谱的峰强度产生了一定影响.

The no-doped ZnO thin film and Nd-doped ZnO thin films were deposited on Si（ 111 ） substrate by RE magnetron sputtering. As analyzed by XRD and AFM, the structure of the thin films was not disturbed by Nd-doping and the thin films were nano-multi-crystal thin films. The no-doped ZnO thin films had high c- axis orientation. The surface morphology of Nd-doped ZnO thin films were roughness and the grain diameter of the thin films were decrease with the increase of the neodymium contents. The room temperature Photolu- minescence spectrum indicates that the films have strong purple band with 395nm and weak green band with 495nm, the peak intensity of RT photoluminescence spectra was affected by neodymium contents and it＇s position remained stable.