薄膜厚度对ZnO∶Zr透明导电薄膜光电性能的影响

Thickness Dependence of Optoelectric Properties of ZnO∶Zr Films Prepared on Water-Cooled Glass Substrate at Room Temperature

利用射频磁控溅射法在室温水冷玻璃衬底上制备出了可见光透过率高、电阻率低的ZnO∶Zr透明导电薄膜。讨论了厚度对ZnO∶Zr透明导电薄膜光学、电学性能的影响。当薄膜厚度为213nm时,薄膜电阻率达到最小值1.81×10-3Ω.cm。所制备的薄膜样品都具有高透光率,其可见光区平均透过率超过了93.0%。当薄膜厚度从125nm增加到350nm时,薄膜的光学带隙从3.58eV减小到3.50eV。

Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency magnetron sputtering at room temperature. The lowest resistivity achieved is 1.81×10^-3Ω·cm at a thickness of 213 nm. All the films present a high transmittance of above 93.0% in the visible range. The optical band gap decreases from 3.58 eV to 3.50 eV as the thickness increases from 125 nm to 350 nm.