乙醇溶液中电沉积CuInSe2(CIS)薄膜过程研究

Study of CuInSe_2(CIS) Films Using Electrodeposition in Alcohol Solution

采用三电极体系,以钼片为工作电极,大面积铂网为辅助电极,饱和甘汞电极(SCE)为参比电极,以氯化铜、氯化铟、亚硒酸为原料,在无水乙醇溶液中,用阴极恒流和恒压两种沉积方法制备出CIS前驱体薄膜,采用XRD和EDAX对制备的薄膜进行了表征,分析了沉积方式、镀液离子浓度、导电盐(LiCl)含量及热处理工艺等因素对薄膜成分及形貌的影响,并对电沉积CIS薄膜的机理进行了初步探讨。在最优条件下所制备的薄膜成分接近标准比且表面致密、均匀。

CIS precursor films were prepared by constant current cathodic electrodeposition and potentiostatic electrodeposition in a three-electrode system, using molybdenum sheet as working electrode, Pt-mesh as a counter electrode, and standard calomel electrode （SCE） as reference electrode. The alcohol solution was composed of copper chloride, indium chloride, selenious acid. The influences of deposition parameters such as different deposition ways, the electrolyte contents, the concentration of LiC1 and heat treatment on films composition and morphology were studied, and the electrodeposition mechanism of CIS films was discussed. The films were characterized by XRD and EDAX, it shows that the chemical composition ratio of the films is close to normal proportion and the films have a compact and uniform surface.