纳米Gd_2O_3掺杂对WO_3基陶瓷电学行为的影响

Effect of Nano-Gd_2O_3 on the Electrical Properties of WO_3 Based Ceramics

采用传统电子陶瓷工艺制备纳米Gd2O3掺杂的WO3陶瓷,对其电学行为进行研究,分析了显微结构与其电学行为的关系。结果表明,小剂量的纳米Gd2O3掺杂能明显改善WO3陶瓷的非线性电学特性,这种影响被认为是元素替代和由此而引起的晶粒尺寸减小共同作用的结果。当掺杂量为50(摩尔分数,下同)时,Gd2O3和WO3发生固相反应生成Gd2(WO4)3相,该相导致WO3相减少甚至消失,这是导致WO3陶瓷非线性电学行为消失的主要原因。

WO3（tungsten trioxide） based ceramics doped with nano-Gd2O3（nana-gadolinium oxide） was prepared by traditional electronic ceramics. The electrical properties and the relation of microstructure and electric properties were investigate. The result show that WO3 ceramics doped with little nano-Gd2O3 can impreove the nonlinear electrical characteristics. It is considered that this infection was caused by the effects of the element-replace and the reducing of the grain sizes caused by the element-replace. There was a solid phase reaction between the Gd2O3 and WO3 which produced Gd2（WO4）3 phase, and it is the main reason of disappearing of nonlinearity characteristics.