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VO_2薄膜制备及掺杂研究进展 被引量:4

The Preparation and Doping Research Progress of VO_2 Thin Film
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摘要 二氧化钒(VO2)是一种性能优异的功能材料,在68℃左右发生金属态-半导体态的转变,其光学和电学性能发生突变,在热电开关、光存储介质和激光防护方面有广泛的应用前景。但是由于钒氧体系十分复杂,给制备高质量的VO2带来了困难。人们做了许多工作来研究VO2的结构性能,使用不同的工艺方法制备VO2以及通过掺杂降低其相变温度。本文通过一些有代表性的VO2的研究成果,从制备工艺和元素掺杂方面做了介绍。 VO2 is an excellent functional material, it will change from metal state to semi- conductor about 68℃, its optical and electrical properties also have a great change, in the heat, electric switches, optical storage media and laser protective aspects have a broad prospect. However, because of vanadium oxygen system is very complicated, to preparation of high-quality vanadium dioxide has brought difficulties. People have done a lot of work to study the structure of vanadium dioxide, and use a lot of different methods to prepare vanadium dioxide, as well as through doping to reduce its phase transition temperature. The representative research results of vanadium dioxide, such as structural change, the film preparation process and the application prospects of vanadium dioxide were introduced.
出处 《电工材料》 CAS 2008年第4期38-41,共4页 Electrical Engineering Materials
关键词 VO2薄膜 制备工艺 掺杂 VO2 thin film preparation process doping
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