氮化镓HEMT器件的新型Cold FET模型

New Cold FET Model for GaN HEMT Devices

改进等效寄生电感的提取对提高小信号等效电路模型的仿真精度具有重要意义,尤其是氮化镓器件(GaN)。针对传统的等效寄生电感提取方法,本文推导了用于GaN HEMT器件的新型Cold FET模型及参数提取。通过对栅宽分别为200μm和1 000μm GaN HEMT的仿真/测试,表明:新的Cold FET模型可用于GaN HEMT器件等效寄生电感的提取。这将有助于场效应晶体管模型的研究。

In order to gain good simulation results of a small-signal equivalent circuit model, it is very important to improve the extraction of equivalent parasitic inductors,especially for GaN devices. Comparing to the traditional extraction method of parasitic inductors, this paper deduces a new Cold FET model and parameter extraction for GaN HEMT devices. By comparing the simulation and measurement of GaN HEMT with gate width of 200 μm and 1000 μm respectively, shown that, the new Cold FET model can be used to extract parasitic inductors of GaN HEMT devices. This helps to the research of FET models.