IGBT二维温度分布及热稳定因子的研究

Research of Two-Dimensional Temperature Distribution and Heat-Stable Factor on IGBT

在已建立的IGBT电学模型基础上,通过解热传导方程,建立了其在热稳定状态下的二维温度分布模型。通过该模型,分析了IGBT在热稳定条件下的的临界条件,以及热稳定因子与温度、热阻、栅压、p阱掺杂浓度的关系。模型结果与二维数值模拟软件MEDICI的模拟结果基本一致。此模型对IGBT工作情况和工艺设计具有一定的参考价值。

The two-dimensional temperature distribution model of IGBT in thermal stability was developed by solving the heat diffusion equation, based on the electronical model which has been developed. Additionally, on the basis of proposed model, the critical conditions of IGBT in the condition of thermal stability and the relationship between thermal stability factor and temperature,thermal resistance, gate voltages, p-well doping density also have been investigated. The predictions of the model are consistent with those of two-dimension numerical simulator MEDICI.