适用于纳米电子器件的超长硅纳米线合成

Synthesis of Very Long Silicon Nanowires for Potential Application in Nanodevice

采用SiO为起始原料、Ar为载气，蒸发温度1300℃、压力1～2×104Pa的生长条件下，成功地合成了超长的单晶硅纳米线；以SiO和P205混合粉末为起始原料时在相同的生长条件下实现了对硅纳米线的掺杂；借助电感耦合等离子体质谱仪（ICPMS）分析了硅纳米线P掺杂效果；利用扫描电镜（SEM）、高分辨透射电镜（HRTEM）、X射线衍射仪（XDR）等检测手段对硅纳米线进行了形貌和结构的表征，测试结果表明在不同的沉积区域硅纳米线具有大致相同的直径，但其长度随着温度的升高而变长，在1180℃的生长区域，硅纳米线的长度达到了150μm；硅纳米线表面氧化层经HF和NH4F混合溶液处理后被完全剔除。

Very long silicon nanowires （SiNWs） were synthesized with SiO as the starting materials and argon as the carrying gas. The growth of SiNWs was controlled at 1300℃ under the pressure of 1 -2 x 104Pa. SiNWs were doped by phosphorus with SiO and P2O5 mixture powders as the starting materials under the same growth condition. The doping density of phosphorus was detected by ICPMS. The morphology and structure of the products were characterized by TEM, HRTEM and XRD. The results revealed that the diameter of SiNWs were similar in different deposition area, while their lengths increased with the enhancement of the deposition temperature. Some of them were more than 150μm in length when the deposition temperature was 1180℃. The amorphous silica shells at the outer surface were removed by HF and NH4F intermixture solution.