基于MEMS制作n-Zn0/p-Si异质结及特性

Fabrication and characteristics of n-ZnO/p-Si heterojunction based on MEMS

基于MEMS技术在p型<100>晶向双面抛光单晶硅片上制作C型硅杯,在C型硅杯上表面扩散p+,采用磁控溅射法在扩散区上制备择优取向为<0002>晶向的n-ZnO薄膜,形成n-ZnO/p-Si异质结。采用HP4280A型C-V特性测试仪分析n-ZnO/p-Si异质结的C-V特性,该异质结为突变结。采用HP4145B型半导体参数测试仪分析n-ZnO/p-Si异质结I-V特性,结果给出,n-ZnO/p-Si异质结在正向偏压下,电流随外加偏压按指数函数增加,反向电流不饱和,采用突变异质结的正反向势垒能带结构对其I-V特性进行分析。

The paper shows a research of adopting MEMS to manufacture c - type silicon cup on p - type 〈 100 〉 single- crystal silicon,which is polished double- surfaces, diffused p^＋ on upper surface of the c- type silicon cup, and using of magnetron sputtering to manufacture n -ZnO thin films on diffusion field, which owned 〈 0002 〉 selected orientation, and then formed n - ZnO/p - Si heterojunction. Adopted HP4280A - type C - V test instrument to analyze C - V characteristics of the n - ZnO/p - Si heterojunction, which is step heterojunction, Adopted HP4145B type semiconductor parameter test instrument to analyze I - V characteristics of the n - ZnO/p - Si heterojunction, the results show that current increases with index function of additional biased voltage, when the n - ZnO/p - Si heterojunction is in the case of positive biased voltage, opposite current is unsaturated, adopted energy band structures of positive and opposite potential barriers of step heterojuntion to analyze I - V characteristics.