摘要
对BSF硅太阳电池受碳、氧离子辐照前后的深能级瞬态谱进行了研究,结果表明碳、氧离子在硅太阳电池中引入的缺陷能级非常相似.都观察到了E1,E2,E3,H1,H25个峰,其中氧离子注量超过4×1012cm-2时E2能级消失.根据能级的性质初步推断了这些能级所对应的缺陷类型.
Using deep level transient spectroscopy,We studies the defect levels of BSF silicon solar cell irradiated by C,O ions.The results show that the DLTS of C,O irradiated solar cell are similar.The three major electron traps( E 1,E 2,E 3 )and two hole traps( H 1,H 2 )were observed.And when the fluency of O ions was beyond 4×10 12 cm -2 ,The E 2 level was disappeared.According to the present studies and others,We speculated the corresponding defect type of the levels.
出处
《武汉大学学报(自然科学版)》
CSCD
1998年第1期74-76,共3页
Journal of Wuhan University(Natural Science Edition)
基金
国家教委和北京大学重离子研究所资助
关键词
深能级瞬态谱
硅太阳能电池
重离子辐照
deep level transient spectroscopy,solar cell,irradiation effect