BSF硅太阳电池重离子辐照的深能级瞬态谱

DEEP LEVEL TRANSIENT SPECTROSCOPY OF BSF SILICON SOLAR CELL IRRADIATED BY HEAVY IONS

对ＢＳＦ硅太阳电池受碳、氧离子辐照前后的深能级瞬态谱进行了研究，结果表明碳、氧离子在硅太阳电池中引入的缺陷能级非常相似．都观察到了Ｅ１，Ｅ２，Ｅ３，Ｈ１，Ｈ２５个峰，其中氧离子注量超过４×１０１２ｃｍ－２时Ｅ２能级消失．根据能级的性质初步推断了这些能级所对应的缺陷类型．

Using deep level transient spectroscopy,We studies the defect levels of BSF silicon solar cell irradiated by C,O ions.The results show that the DLTS of C,O irradiated solar cell are similar.The three major electron traps( E 1,E 2,E 3 )and two hole traps( H 1,H 2 )were observed.And when the fluency of O ions was beyond 4×10 12 cm -2 ,The E 2 level was disappeared.According to the present studies and others,We speculated the corresponding defect type of the levels.