摘要
根据太赫兹时域光谱系统(TDS)的测量原理,提出了一个考虑F-P效应的半导体材料参数测量方案。利用该方案可以在时域波形中,截取多个反射回峰,以提高材料参数提取的精确度。另外,考虑到多重反射对样品厚度的准确性要求较高,提出了一种有效的厚度优化方法。以GaAs为待测样品,利用上述方法精确提取了其折射率与消光系数谱。并采用返波振荡器(BWO)作为太赫兹辐射源对相同样品进行测量,有效的验证了使用TDS系统对半导体材料参数测量的准确性。
An optical material parameter extracting method was introduced, which considered the Fabry- Perot effect by the measurement principle of THz time-domain spectroscopy. With this method, time window could be got including a number of copies of the main pulses to enhance the accuracy of the optical parameters. Furthermore, considering the thickness of sample must be precise, the accurate determination of the sample thickness was proposed. A 1 mm-thick GaAs sample was chosen to extract its optical parameters. BWO was used to measure the same sample to verify the result.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第12期1074-1076,1099,共4页
Semiconductor Technology
基金
浙江省科技厅资金支持项目(2008C23018)
