摘要
5次光刻工艺(简称5PEP)是一种新的研究,分为背沟道刻蚀型和背沟道保护型。5PEP改变了TFT结构和原理,相对于常用的7 PEP可缩短生产周期,减少使用设备,提升成品率,降低成本。研究制定了背沟道刻蚀型与背沟道保护型5PEP的主要工序步骤,并通过50.8 mm液晶屏多次小批量投产进行试验。探讨了刻蚀型5PEP中a-Si岛刻蚀不良、SiNx刻蚀跨断等问题。取得合理的工艺参数,使5PEP能应用于小尺寸液晶屏的TFT量产。
As a new research 5 photo engraving process （5PEP） is divided .into back channel etching and back channel protection. 5PEP changed the TFT （thin film transistor） structure and the principle. Comparing with 7 photoetching craft, it has great progress of reducing the production cycle and equipment, promoting the rate of yields with low cost. The procedure step of back channel etching and the back channel protection 5PEP was settled, and it was carried out through 50.8 mm liquid crystal display in small batch. The a-Si island issues and the SiNx etching cross breaks were discussed. The reasonable technological parameters were obtained, it enables 5PEP apply in small-sized liquid crystal display TFT lot production.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第12期1080-1083,共4页
Semiconductor Technology
