Si片磨削中砂轮粒径对Si片损伤层的影响

Effect of the Grain Size of Grinding Wheel on Surface Damage in Grinding of Si Wafer

在直径300 mm Si片制备中,利用双面磨削技术能为后续加工提供高精度的表面,但Si片损伤层厚度较大。通过扫描电子显微镜和透射电子显微镜对Si片表面及截面进行观察,得到了经不同粒径的砂轮磨削后的Si片的表面及截面形貌、Si片的表面及亚表面损伤层的厚度并进行了分析比较。结果表明,用粒度更小的3000#砂轮磨削,能够有效地降低Si片表面及亚表面损伤层的厚度,为优化300 mm单晶Si片双面磨削工艺、提高Si片表面磨削质量提供了清晰、量化的实验理论依据。

Using double side grinding technology in the 300 mm Si wafer manufacturing process can give high accuracy surface parameters to the later process, but the damage depth of surface is big. Being observed the surface and section of the Si wafer by SEM and TEM, the surface morphology, section morphology, the surface and the inferior surface damage depth of the wafer which was grinded by grinding wheels of different grain sizes were obtained, the comparison son results of them were got. The results show that it can reduce the surface and the inferior surface damage depth of the wafer using 3000 # wheels. These results also provide the clear and quantitative theory basis for optimizing the handicraft of double side grindings of 300 mm single crystal Si wafer, and improving the quality of Si wafer surface grinding.