SiC衬底X波段GaN MMIC的研究

Study on X-Band GaN MMIC with Homemade SiC Substrate

使用国产6H-SiC衬底的GaN HEMT外延材料研制出高工作电压、高输出功率的AlGaN/GaN HEMT。利用ICCAP软件建立器件大信号模型,利用ADS软件仿真优化了双级GaNMMIC,研制出具有通孔结构的GaN MMIC芯片,连续波测试显示,频率为9.1~10.1 GHz时连续波输出功率大于10 W,带内增益大于12 dB,增益平坦度为±0.2 dB。该功率单片为第一个采用国产SiC衬底的GaN MMIC。

A high-performance AlGaN/GaN HEMT was successfully fabricated with domastic-made SiC substrate. Using typical data of the device, large-signal model was developed by ICCAP and a two-stage GaN MMIC was simulation by ADS. ＇Fne MMIC has a CW output power of over 10 W, 12 dB power gain from 9.1 to 10.1 GHz and with a gain flatness of ＋0.2 dB. It＇s the first GaN MMIC with domastic-made SiC substrate.