Si基体二维深通道微孔列阵刻蚀技术

Etching Technology of Si-Based Two-Dimension Deep Microchannel Array

Si材料二维深通道微孔列阵是新型二维通道电子倍增器的基体,其可以采用感应耦合等离子体(ICP)刻蚀和光电化学(PEC)刻蚀等半导体工艺技术实现。简述了ICP工艺原理和实验方法,给出了微孔直径6～10μm、长径比约20、平均刻蚀速率约1.0μm/min的实验样品,指出了深通道内壁存在纵向条带不均匀分布现象、成因和解决途径;重点论述了微孔深通道列阵PEC刻蚀原理和实验方法,在优化的光电化学工艺参数下,得到了方孔边长3.0μm、中心距为6.0μm、深度约为160μm的n型Si基二维深通道微孔列阵基体样品,得出了辐照光强、Si基晶向与HF的质量分数是影响样品质量的结论,指出了光电化学刻蚀工艺的优越性。

The Si-based two-dimension deep microchannel array is the main body of the new type of two-dimension channel electron multipliers, and can be realized by semiconductor technologies such as inductively coupled plasma （ICP） etching and photo electrochemical （PEC） etching. The principle and experiment method of ICP technology for fabricating the deep-microchannel array were briefly introduced. The experimental sample with a channel diameter of 6- 10 μm, length to diameter of 20 and average etching rate of 1.0 μm/min was shown. The phenomenon, cause and solution of the inhomogeneous distribution strips in the longitudinal inner-wall of the channel were presented. The principle and experimental method of PEC technology for fabricating the deep-microchannel array were introduced＇ in detailed. The dimensions of the obtained n-type Si-based two-dimensional microchannel electron multiplier sample using the most electrochemical optimized technological condition were shown as follow： the side length of the square channel was 3.0μm, the distance between two channel centers was 6.0 μm, and the depth of the channel was 160 μm. The conclusions show that the luminescence intensity, orientation of the Si wafer and the concentration of the HF greatly influence the quality of the sample, and the photo electrochemical etching method has superiority.