InGaN量子阱激光器增益和阈值电流的理论计算

Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers

根据现有的材料参数，计算了Ｉｎ０．２Ｇａ０．８Ｎ／Ｉｎ０．０５Ｇａ０．９５Ｎ量子阱激光器的增益、阈值电流密度以及阈值与温度的关系。理论分析表明氮化物蓝绿光激光器的阈值电流密度是ＧａＡｓ材料的５倍以上，但其特征温度可接近５００Ｋ。

The calculated results of the gain, threshold current density and its temperature dependence of InGaN QW lasers based on the available parameters are presented in this paper. The threshold current density of nitride blue and green QW lasers is more than five times higher than that of GaAs QW lasers, but their characteristic temperature can be raised up to 500 K.