摘要
简单介绍了布里奇曼法生长碲镉汞晶体的主要缺陷以及缺陷的控制原理，回顾了国内进行碲镉汞晶体生长的布里奇曼法及加速坩埚旋转技术的布里奇曼法（ＡＣＲＴＢ）研究的情况，并提出了进一步研究的问题。
The defects in MCT crystals grown by Bridgman method and defect control principle were discussed. Current state of MCT Bridgman and ACRT B growth in P.R. China was reviewed. Problems need to study in the furture during Bridgman growth were proposed.
出处
《红外技术》
CSCD
北大核心
1998年第1期1-4,8,共5页
Infrared Technology
