摘要
根据动能定理和薄板理论提出了一种新的脆性材料强度测试方法——圆片冲击法。通过当硅片较薄时偏离小挠度条件的实验校准,使该方法适用于各种厚度硅片的强度测量,进而制订了硅片抗弯强度测试方法的国家标准。
A novel method for measuring strength of brittle materials——circular wafer impact method is presented based on kinetic energy theorem and sheet theory.The method is suitable for measuring the strength of silicon wafer with various thickness through experiment correction for deviating from small deflection when the silicon wafer is thinner.GB/T 156151995 test method for flecxure strength of silicon wafer was worked out based on the circular wafer impact method.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第1期47-49,共3页
Semiconductor Technology