摘要
用准分子激光在含氧气氛中对硅靶材料进行反应剥离，并让反应生成物沉积在单晶硅片表面上．用Ｘ射线光电子能谱、透射电镜分析，以及光致发光谱等方法对沉积的薄膜进行研究．结果显示，形成的薄膜是非晶态的二氧化硅组分，并且在其中含有少量的微米量级的多晶硅颗粒，在４４０ｎｍ附近的蓝光范围内有一光致发光带。
Abstract Excimer laser is used to ablate silicon from silicon target in oxygen containing atmosphere. The reactant is deposited on the crystal silicon wafers. X Ray photoelectron spectroscopy, transmission electron microscopy and photoluminescence measurements are used to characterize the deposited films. The results show that the deposited films are amorphous silicon dioxide containing polycrystal silicon particles with micrometer dimension. Blue photoluminescences are observed in the wavelength range of about 440nm. A plausible recognition suggests that it is arisen from oxygen deficiency defect in SiO x matrix.
基金
大连理工大学三束材料改性国家重点联合室验室资助
