GaAs/AlGaAs近表面单量子阱的光调制光谱研究

Study of GaAs/AlGaAs Single Quantum Well by Photomodulated Reflectance Spectroscopy(PR)

我们利用光调制反射光谱研究了ＧａＡｓ／ＡｌＧａＡｓ单量子阱，观察到了电子的１１Ｈ及１１Ｌ跃近．通过改变表面垒的厚度，使得真空垒对阱中电子态影响发生变化，由于量子阱中电子态所受的约束的加强，我们观察到了价带到导带的跃迁明显的蓝移（ＨＨ１到Ｅ１，ＬＨ１到Ｅ１）．这种蓝移的现象可以用方势阱加真空势垒及内建电场的模型来解释．

Abstract We use photomodulated reflectance spectroscopy to study GaAs/AlGaAs single quantum well. We have observed the electronic transition 11H and 11L. As the thickness of top barrier changes, we have observed that the vacuum potential affect the in well electron states, and the blue shifting of 11H and 11L transiton. We explain the experiment results using a simple model.