摘要
本文利用计及表面电荷的柱面结电场分布表达式，并根据场限环优化条件，首次建立了单场限环表面电荷效应优化模型，得到了考虑表面电荷效应后，优化单场限环结构击穿电压以及优化环间距的归一化计算公式．分析了表面电荷密度对场限环结构耐压和优化环间距的影响，计算结果与文献中的数值模拟结果相符合。
Abstract In this paper,the normalized expressions of breakdown voltage and optimum ring spacing of single floating field limiting ring(FFLR) structure are derived by use of the formula of eletric field including the surface charge in the cylindrical P + N junction.The accuracies of the analytical expressions are verified by comparison with the mumerical simulation results in the published paper.This approach can be used directly and conviently in the optimum design for FFLR’s structures.
基金
国家自然科学基金
