摘要
利用经标志样本集训练的人工神经网络对Ⅲ－Ⅴ、Ⅱ－Ⅵ族二元化合物和Ⅰ－Ⅲ－Ⅵ２、Ⅱ－Ⅳ－Ⅴ２族三元化合物半导体的禁带宽度和熔点进行了预报。
Abstract Artificial neural network trained by experimental data has been used to predict the values of the band gap and melting point of Ⅲ Ⅴ,Ⅱ Ⅵ binary compound andⅠ Ⅲ Ⅵ 2, Ⅱ Ⅳ Ⅴ 2 ternary compound semiconductors. The calculated results are in good agreement with the experimental ones.
关键词
化合物半导体
禁带宽度
熔点
Semiconducting silver compounds
Band structure
Neural networks
