摘要
利用ANSYS软件建立了高性能厚膜熔断器的有限元模堑，并对其在正常工作状态下的瞬态温度场变化过程进行了数值模拟，得到熔断器引脚温升为65．30℃，电阻为0．05719Ω，发热功率为0．91504W等参数，并进行了实验验证。结果表明：实验和数值模拟的误差率为3．00％-4．00％，为熔断器的设计制造提供了方法和理论依据。
To establish the finite element model of high performance thick film fuse, a numerical simulation was performed for its change process of instantaneous temperature field at normal work status by ANSYS software. 65.30 ℃ of the temperature rise for the fuse lead, 0.057 19 Ω of resistance and 0.915 04 W of heating power were gained and verified by experiments. Results show that the error rates between the numerical simulation and the experiments are 3.00% - 4.00%, providing a way and theoretical basis for the design and fabrication of the fuse.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第1期53-55,共3页
Electronic Components And Materials
关键词
厚膜熔断器
电气特性
有限元模拟
误差率
thick film fuse
electric characteristic
finite element simulation
error rate
