超薄锗片背面磨削技术的研究

Research of back surface grinding technology on ultra-thin germanium wafers

在推广表面磨削技术大量实践的基础上,对表面磨削工艺和双面研磨工艺进行了对比,通过实验的方法,对切割后的锗片表面用四种不同粒度的砂轮进行磨削,对磨削后晶片的厚度、TTV、Ra、损伤层进行了测试,结果表明,晶片的Ra、损伤层随着砂轮粒度的降低而降低,使用1500#砂轮获得了较理想的表面粗糙度(0.10～0.15μm)。

The application of the surface grinding technology was shown. On the base of several experiments, the surface grinding process and the double surface lapping process were compared. Four kinds of wheels were adopted to grind the germanium sliced wafers in the experiments. Several parameters were measured after the grinding experiments, including thickness, total thickness variation （TIV）, surface roughness （Ra） and damage layer. The experiment results indicate that the surface roughness and damage layer decrease with the grain diameter of the grinding wheel decrease. The good surface roughness can be gotten with the 1500 type of the grinding wheel.