SNS与SINIS结阵制作工艺的比较

Fabrication Processes of SNS and SINIS Junction Arrays

国家电压基准是基于约瑟夫森量子化效应的。传统的SIS结阵具有不能快速选择特定的台阶,相位锁定时间短的问题。I-V曲线无回滞的约瑟夫森结阵,其I-V曲线单值,电压台阶宽,解决了SIS结阵的问题。美国标准技术研究院的Hamilton提出并制作高度阻尼的可编程SNS约瑟夫森结阵电压标准;德国物理技术研究院则选择SINIS结来制作可编程约瑟夫森结阵电压基准。从结构、性能和制作方法等方面对SNS和SINIS可编程约瑟夫森结阵进行了比较。

National voltage standard is based on the Josephson effect. Hamilton of NIST proposed a programmable Josephson junction voltage standard composed of highly damped SNS junctions, which is more stable than the conventional SIS junction arrays. PTB adopted the programmable Josephson junction voltage standard composed of SINIS junctions. Structures, characters and fabrication processes of SNS and SINIS junctions were discussed in this paper.