摘要
位置敏感探测器(PSD)的响应时间直接影响其动态探测入射光位置的准确性。分析了电势堆积现象,以四边形二维PSD为例,建立了PSD响应时间的仿真模型,分析了对响应时间的影响因素。结果表明,PSD响应时间随着光敏面大小、p型层电阻值以及级间电容的增大而同比例增大;在PSD器件的结构参数和物性参数不变的情况下,光源入射能量与器件的响应时间无关。
The response time of Position Sensitive Detector(PSD) has a direct effect on the veracity of incident light positions detected dynamically by PSD. The phenomenon of optovoltage accumulation is analyzed. Two-dimensional PSD with tetralateral type is set as an example to establish the simulation model of response time of PSD and analyzed is its affection factors. Results show that the response time of PSD increases in the same proportion to the increases of light sensitive surface area, resistance value of p-type layer and junction capacitance value. Under the condition of same parameters of structure and physical characteristics, the energy of incident light is independent of the response time of PSD.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2008年第6期859-861,967,共4页
Semiconductor Optoelectronics