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光吸收谱法鉴别碳化硅晶体的多型体结构

Polytype Identification of SiC Crystals by Optical Absorption Spectroscopy
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摘要 用光吸收谱法对3种常见的碳化硅单晶多型结构进行鉴别,结果显示,4H-、6H-及15R-碳化硅多型体结构的光吸收谱的吸收边位置有明显差别,计算表明,这对应于其自身的带隙宽度.同时从吸收谱上还可以看到非故意掺杂引入的载流子引起吸收边的偏移.分析了不同掺杂类型对吸收边的影响. Three familiar polytypes of silicon carbide single crystal were identified by optical absorption spectros- copy. The results show that the distinctions of the characteristics absorption bands of 4H-.6H-and 15R-SiC polytypes are obvious. They are corresponding to their own band gaps. Variation of the band gap related absorption with charge concentration is observed. Influence on absorption spectra of different doping types was analyzed.
作者 陈静
机构地区 淮阴师范学院物理系
出处 《淮阴师范学院学报（自然科学版）》 CAS 2008年第3期220-223,共4页 Journal of Huaiyin Teachers College;Natural Science Edition
关键词 光吸收谱 碳化硅单晶 多型体鉴别 掺杂 载流子 optical absorption spectroscopy silicon carbide single crystals polytype identification doping carrier
分类号 O657.37 [理学—分析化学]
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参考文献11

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淮阴师范学院学报（自然科学版）
2008年 第3期

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