氧空位对Fe掺杂ZnO的铁磁性的影响

Influence of Oxygen vacancy on the ferromagnetism in Fe doped ZnO films

利用反应磁控溅射法在S i基地生长Zn1-xFexO(x=0.04,0.06,0.08,0.10,0.12)薄膜.X射线衍射结果表明所有样品都具有纤锌矿结构,且C轴择优取向.X射线光电子能谱显示薄膜中的Fe离子为+2价态.磁力显微镜结果表明薄膜具有明显的磁畴花样.磁性测量表明所有在真空下退火的样品都具有室温铁磁性而空气下退火样品具有顺磁性.薄膜中的铁磁性与氧空位有关.

Zn1-xFexO （x =0.04, 0.06, 0.08, 0.10, 0.12） thin films were grown on Si substrates using r, active magnetron sputtering. X -ray -diffraction analyses show that the samples have wurtzite structures with the c -axis orientation. X- ray photoelectron spectroscopy results indicate that the Fe ions are in a ＋ 2 charge state in the films. Clear magnetic domains are observed. Magnetization measurements indicate that room temperature ferromagnetism is present in films annealed in vacuum while films annealed in air were paramagnetic. The room temperature ferromagnetism is related to oxygen vacancies in these films