方铅矿-苯胺黑药体系浮选电化学特性的研究

ELECTROCHEMICAL STUDY ON N, N’DIPHENYLAMINO DITHIOLPHOSPHORIC ACIDGALENA FLOTATION SYSTEM

本文作者对方铅矿－苯胺黑药浮选体系进行了电化学特性的研究，提出了方铅矿无捕收剂的可浮性应同表面元素Ｓ的含量与表面大于等于＋４价态的硫的含量之比Ｒ（Ｒ＝｛Ｓ０｝∑｛Ｓ＋ｉ｝，ｉ＝＋４，＋６）有关。研究认为该浮选体系中苯胺黑药存在时，方铅矿的高浮游性主要是方铅矿表面形成了苯胺黑药的阳极氧化产物所致，并且此时方铅矿表面尚未形成本身的氧化（生成强裂亲水的氧化产物）。此浮选体系的最佳浮选电位区域就是苯胺黑药形成氧化产物开始至方铅矿本身形成强烈的亲水氧化物为止的电位区间。

alenaN, N’ diphenylaminodithiolphosphoric acid flotation system was studied with electrochemical methods It was pointed out that the collectorless floatability of galena not only related with existence of sulphur, but also with the amount of high valence sulphur (over a valence of zero) on surface of galena The ratio R(R={S0}Σ{S+i},i=4,6) could reflect the floatability of galena It was further found that the high floatability of galena in the system could ascribe to anode oxidizing products of N,N’ diphenylaminodithiolphosphoric acidThe range of optimum electrode potential in the fltation system was that from the beginning of N,N' diphenylaminodithiolphosphoric acid anode oxidation to the end of galela itself anode oxidation