金属钨纳米线阵列的制备

Synthesizing metallic tungsten nanowires array

用气相方法在较低的温度(900℃)下在单晶硅基片表面制备出金属钨的单晶纳米线阵列,用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X-ray衍射(XRD)等手段对其进行了分析和表征.结果表明:在900℃制备的阵列单晶钨纳米线沿〈111〉方向生长,具有bcc结构,直径约为150 nm,长度为10-30μm.

Metallic tungsten array can be successfully synthesized on the silicon substrate by vapor method at low temperature （900 ℃）. SEM, TEM and XRD analysis results of tungsten nanowires synthesized under 900 ℃ show： the synthesized nanowires have diameters of 150 nm, and lengths of 10- 30 μm. the nanowires show well-defined bcc single-crystalline structure with growth direction along （111）.