沉积温度对多晶硅吸杂薄膜的影响

Influence of Depositing Temperature on Gettering Film of Polysilicon

研究了在不同温度下生长多晶硅吸杂薄膜,薄膜应力对硅单晶抛光片翘曲参数的影响,并对所得的多晶硅薄膜结构进行扫描电镜观察。实验结果表明,随着沉积温度的不断升高,多晶硅晶粒不断长大,晶界减少,多晶硅薄膜应力逐渐降低,吸杂硅片的翘曲度逐渐减小,综合考虑硅片的吸杂效能与弯曲翘曲度控制,650～680℃为多晶硅薄膜最佳沉积温度。

Various gettering films of polysilicon were deposited at different temperatures and the influence of depositing temperature on the warping parameters of polished wafers was investigated. The morphology of polysilicon film was also characterized by means of scanning electron microscope. It was found that with the increase of depositing temperature, the grains of the polysilicon were grown up, the grain boundaries and the stress of polysilicon film to substrate were gradually reduced, but the warping of polished wafer was also reduced at the same time. Consideration of gettering performance with the degree of warping of the film, the optimum deposit temperature of the polysilicon film was suggested in the range from 650 ℃ to 680 ℃.