电沉积法制备PbS薄膜的XRD分析(英文)

XRD ANALYSIS OF PbS THIN FILMS PREPARED BY ELECTRODEPOSITION PROCESS

采用阴极恒电压法在ITO导电玻璃表面沉积了PbS薄膜,并用X-射线衍射仪(XRD)对薄膜的结构进行了表征,研究了沉积电压对薄膜的晶相组成的影响.结果表明:在U=3.0 V时,可制备出沿(111)晶面取向生长的立方相PbS薄膜;随沉积电压从3.0 V增加到4.5 V,薄膜的生长取向从(111)晶面变为(200)晶面,且PbS衍射峰的强度越来越强,到18 V时达到最强.

PbS thin films were prepared on ITO substrates using a constant voltage cathodic electrodeposition method. The as-deposited thin films were characterized by X-ray diffraction （XRD）. The influence of deposition voltage on the phase composition and crystallization of the films has been particularly investigated. Results show that cubic PbS thin films with oriented growth along （111） direction can be obtained at or above 3.0 V. With the increases of voltage from 3.0 V to 4. 5 V, the preferential growth orientation changes from （111） to （200）. And the peak intensities of the PbS thin films become sharper and perfect until the voltage is up to 18 V.