4H-SiC(000(3×3)重构的原子能态

Atomic Energy State of 4H-SiC(0001)(3×3) Reconstruction

为了探索SiC表面的结构和原子的能态,在650℃条件下,用低能电子衍射(LEED仪),观察到4H-SiC(0001)(3×3)重构面的LEED图样,利用配备有XPS设备的电子能量分析器,记录SiC(0001)(3×3)重构的角分辨X射线光电子能谱(XPS),得出该结构中Si2p和C1s的能态结构,进而发现SiC(0001)(3×3)重构面仅由硅原子形成,是在扭转的硅增层上的Si四聚物.通过比较体内和表面Si2p态的光电子能谱,得出表面Si2p态的漂移能量.

In order to investigate the surface structure and the atomic energy state under the condition of 650℃, the LEED pattern of 4H-SiC（0001）（3×3） reconstructed surface was observed, using Low Energy Electron Deflection（LEED）. With the aid of electron energy analyzer equipped with XPS apparatus, the angle-resolved X-ray photoelectron spectra （XPS） of SiC （0001）（3×3） was recorded. The energy state of Si2p and Cls in SIC（0001）（3×3） structure was determined. It is clarified that the SiC （0001）（3×3） reconstructed surface is composed of only silicon atom, that is the Si tetramer on a twisted Si ad-layer. The drift energy of surface Si2p state was also obtained through comparing the photoelectron spectra of the inner Si2p state with surface Si2p state.