6H-SiC γ辐照的正电子研究

A Study of γ Irradiated 6H-Silicon Carbide by Positron Annihilation

用正电子湮没寿命谱(PALS)方法对经过不同剂量γ辐照的n型6H-SiC内的缺陷进行研究。实验表明,辐照可以使样品内部产生单空位缺陷Vc。对实验中得到的寿命谱的变化进行分析发现,低剂量的γ辐照对n型6H-SiC有类似退火效应的作用。这些研究结果可以为n型6H-SiC的生产及其可能的应用提供有效的参考价值。

The defect behaviors in 6H-Silicon Carbide which were irradiated by different dose γwere studied by Positron Annihilation Lifetime Spectroscopy （PALS）. From the experiment results,it is observed that after irradiation,there are some Ve vacancies created. Considering the changes of the lifetime spectroscopy, it is obvious that there are some vacancies annealed after low dose γ irradiation to 6H-Silicon Carbide. This means that the low γ irradiation can have the sanle effect like annealing. This study is very useful to the application and product of 6H-Silicon Carbide.