镓聚焦离子束研磨Cu薄膜的模拟

Simulation for Sputtering yield of Cu thin Film Milled by Ga Ions Focused Ion Beam

利用TR IM模拟中的蒙特卡罗方法计算了镓(Gallium)离子在Cu薄膜上的溅射产额。分析溅射产额对镓离子的数量、入射离子的能量和离子入射角度的依赖关系。

The sputtering yields of the Cu thin film milled by Ga ions focused ion beam are investigated by Monte Carlo method in TRIM soft in this article. The dependences of the sputtering yield on incident ion energy, incident angle and the number of Gallium ions are predicted.