摘要
设计了一种不加栅网结构的低阻抗渡越辐射振荡器器件,器件阻抗为20Ω左右,采用同轴输出,具有所需导引磁场小、起振时间较快等优点,可望工作在重频和长脉冲状态。PIC粒子模拟表明,在输入电压和电流分别为550 kV和27.6 kA、约束磁场为0.8 T的条件下,在S波段3.175 GHz得到了平均功率大约4.0 GW的微波输出,束-波转换效率为26.4%。
A novel foilless S-band low-impedance transit-time oscillator was designed. The impedance of this oscillator is about 20Ω. Such an oscillator with coaxial structure has the advantages of low guide magnetic field and quick saturation time, expectantly operating repetitively and in a long-pulse state. As indicated by PIC simulations, the average power of output microwave is about 4.0 GW at the main frequency of 3. 175 GHz with the input-diode voltage of 550 kV, the input-diode current of 27.6 kA, and the extra magnetic field of 0.8 T. Based on the simulation results, the power efficiency of microwave is about 26.4%, better than that of a high-impedance transit-time radiation oscillator at the same input voltage.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2008年第12期2055-2058,共4页
High Power Laser and Particle Beams
基金
国家高技术发展计划项目
关键词
高功率微波
渡越辐射振荡器
阻抗
同轴结构
high power microwave
transit-time radiation oscillator
impedance
coaxial structure
