基于场效应晶体管的高压电脉冲产生技术

High-voltage pulse generation with MOSFET

以高速MOSFET器件为基础,对超快高压电脉冲产生技术进行了实验研究。采用多路并联的高速MOSFET与感应叠加相结合的形式,得到脉冲半宽度为300 ns、上升时间约为60 ns、时间间隔600 ns的超快方波双脉冲;在负载电阻为11.5Ω时,可以产生365 A的脉冲峰值电流,并且能够提供1.5 MW的峰值输出功率。

Based on high speed MOSFET switches, the dual ultrafast high voltage pulses are generated with the inductive adder circuit topology. The pulses＇ half-width is 300 ns, the rise time is about 60 ns and the time interval between two pulses is 600 ns. The peak pulse current could be 365 A for a load of 11.5Ω and the corresponding output peak pulse power is 1.5 MW.