摘要
主要描述了ＧａＮ中施主和受主杂质的能级、氢在掺杂中的作用以及空位的某些特性，同时讨论了该领域未来的研究趋向。
In this paper , the properties of impurities and defects in GaN are described. These properties include the energy levels of donors and acceptors , the role of hydrogen in doping and the characterization of vacancies. Also the research trend in this area is discussed.
出处
《半导体情报》
1998年第1期42-44,共3页
Semiconductor Information
关键词
氮化镓
半导体
杂质
缺陷
Gallium nitride Semiconductor Impurity Defect
