砷化镓欧姆接触中的能带工程

Energy Band Engineering for GaAs Ohmic Contact

介绍了欧姆接触中运用能带工程的原理，评述了近年来ＧａＡｓ欧姆接触中能带工程应用的研究状况。具体分析了用薄的窄能隙材料做帽层降低势垒高度和基于Ｉｎ金属化系统的欧姆接触两方面的应用。

The design concept of energy band engineering is introduced into GaAs ohmic contact.Specifically,the reduction of barrier height by using thin and narrow energy gap material as cap layer is described,as well as the application of ohmic contacts based on In metallization system.Also,the recent progress in energy band engineering for GaAs ohmic contact is reviewed.