应变补偿InGaAsP/InP量子阱DFB激光器与“扇形”光放大器的集成

Strained Compensented InGaAsP/InP MQW DFB Laser Integrated With Tapered Semiconductor Laser Amplifier

本文在国内首先报道采用ＭＯＶＰＥ技术研制成功了ＩｎＧａＡｓＰ／ＩｎＰ应变补偿型量子阱ＤＦＢ激光器与“扇形”光放大器的集成器件，实现了３０ｍＷ单纵模工作．采用调制光放大器、静态偏置ＤＦＢ激光器的方法，产生了低啁啾、高功率的单纵模高频光脉冲．集成器件的研制成功，为其它含介质光栅反射器的光子集成器件的研制开辟了一条广阔的道路．

Abstract InGaAsP/InP strained compensented MQW DFB laser integration with tapered semiconductor laser amplifier has been successfully realized by LP MOVPE. It achieves more than 30 mW single longitudinal mode output power. Using amplifier modulation, instead of directly modulating DFB laser, we have achieved lower chirp optical pulse of high frequency. The processing tecnique will be applied for more complicated cavity structures, such as DFB laser integrated with electronic absorbtion(EA), modulator or DFB LD,Semiconductor Laser Amplifier(SLA),EA modulation integrated together for WDM source.