摘要
为了进行有效的集成电路（ＩＣ）成品率预报及故障分析，与光刻有关的硅片表面缺陷通常被假定为圆形的或方形的．然而，真实的缺陷的形貌是多种多样的．本文讨论了缺陷轮廓所具有的分形特征．
Abstract For efficient yield prediction and inductive fault analysis of integrated circuits (IC), it is usually assumed that defects related to the photolithographic of wafer surface have the shape of circular discs or squares. Real defects, however, exhibit a great variety of different shapes. The fractal characterizations of real defect outlines are discussed. The results obtained in this paper will be usefull for a fine characterization and computer simulation of the defects on wafer.
基金
863高科技项目
军事预研项目资助
