用308nm准分子激光改变二氧化钛陶瓷的电导率

Changing Conductivity of Titania with 308nm Excimer Laser

用３０８ｎｍ准分子激光对二氧化钛陶瓷辐照，当能量密度高于阈值时，使其导电性能发生了显著的变化，室温下从原来的绝缘体转变为半导体。利用Ｘ射线衍射、Ｘ射线光电子能谱及显微分析等多种测试方法进行了分析、比较，确定了该过程是由于高峰功率短脉冲的准分子激光对ＴｉＯ２的快速熔凝作用，导致了氧的缺位，引起了化学配比偏离。

Its electric conductivity change markly when TiO 2 ceramic is irradiated with 308nm excimer laser if its fluence is over the threshold,it is transfromed from insulator to semiconductor in room temperature.Analysising and comparing the samples before and after acted by laser with XRD,XPS,microscope methods et al.It can be determined that the procedure takes place because higher fluence excimer laser irradiates on the surface of titania,the temperature on surface rises quickly,a thin layer of the irradited area is molten and then resolidifies quickly,which leads to oxygen deficient so stoichiometric deviates.