摘要
The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions,the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF,and the ion stopping power of SiO2 IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.
The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films （IBFs） of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions, the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF, and the ion stopping power of SlOE IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.
关键词
真空电子学
电子物理学
光电子学
激光
optoelectronics and laser
ion barrier film
microchannel plate
Monte Carlo simulation
