摘要
运用穿通和非穿通型球面结击穿理论，对瞬态过压保护用逆导型二极管进行了最佳设计，获得了满意的结果。
A reverse conducting diode for suppressing transient over voltage is designed by using the theory of punched through and unpunched through spherical curved junction break down.The result is satisfactory.
出处
《电力电子技术》
CSCD
北大核心
1998年第1期79-81,共3页
Power Electronics
关键词
过电压保护
逆导管
设计
瞬态过电压保护
power semiconductor devices
structure
design/RC transient overvoltge suppression diode
