热处理时间对溶胶-凝胶法制备ITO薄膜结构、形貌和性质的影响

Influence of Annealing Time on Structure,Morphology and Property of ITO Thin Films Prepared by Sol-gel Process

以InCl3.4H2O、SnCl4.5H2O、乙酰丙酮为原料,采用溶胶-凝胶旋涂工艺在普通玻璃基底上制备了ITO薄膜,每次旋涂之后,将样品放在260℃的烘箱中干燥15min,然后进行第二次旋涂,最后在300℃对样品进行热处理。随着退火时间的延长,XRD衍射结果表明,薄膜的结构由退火前的InOCl的简单斜方结构转变为ITO的立方铁锰矿结构。当热处理时间为22h时,薄膜的方块电阻达到最小值1500Ω/□,电阻率为6×10-2Ω.cm,而可见光范围透过率达到最大值83%。

Transparent conductive indium tin-oxide （ITO） thin films are deposited by the sol-gel spin-co- ating process on the common glass substrate using solutions of 2, 4-pentanedione, ethanol, indium and tin salts. The films are dried in oven at 260℃ for 15rain for each coating process, and finally annealed at 300℃ for various duration. The X-ray diffraction measurement employing CuKa radiation is performed to determine the crystal- linities of the ITO films, which shows that they are polycrystalline with cubic bixbyite structures changed from InOCl primitive orthorhombic structures of as spin-coated films. The sheet resistance reaches a minimal value of 1500Ω/□, and the transmittance in visible range reaches a maximum value of about 83% for the films annealed at 300℃ for 22 hours.