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低电压、高PSRR的带隙电压基准源 被引量:3

Low voltage high PSRR band-gap voltage reference
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摘要 设计了一款高精度、低电源电压的CMOS带隙基准源,具有良好的电源抑制比。电路采用电流模结构和反馈控制实现了低电压、低功耗和高电源抑制比。基于0.25μm CMOS工艺,测试结果表明:在1V电源电压下,1KHz频率时,电源抑制比约为80dB,在0-70℃温度范围内,输出电压变化率不超过0.3%。 A low power and high precision CMOS band- gap voltage reference circuit is presented with high power supply rejection ratio(PSRR). The proposed circuit uses a regulated current mode structure and feedback loop to reach a low voltage, low power and high PSRR voltage reference. Based on 0.25μm CMOS process, the measured results show that the PSRR is about 80dB at the frequency of 1KHz under the power supply of IV, and the output voltage variation versus temperature ranging from 0℃ to 70℃ is less than 0.3 %.
作者 徐静萍
出处 《西安邮电学院学报》 2009年第1期53-56,共4页 Journal of Xi'an Institute of Posts and Telecommunications
关键词 模拟电路设计 带隙基准源 电源抑制比 低电压 analog circuit design hand - gap voltage reference PSRR low voltage
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参考文献6

  • 1郑浩,叶星宁.一种低压CMOS带隙电压基准源[J].微电子学,2005,35(5):542-544. 被引量:6
  • 2Anne-Johan Annema. Low-power bandgap reference featuring DT- MOST's[J]. IEEE Journal of Solid - state Circuits, 1999,34 (7) : 949 - 955.
  • 3毕查德 拉扎维(著) 陈贵灿 程军 张瑞智 (译).模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2003.151-155.
  • 4Yueming Jiang,Edward K. F. Lee. A low voltage low I/f noise CMO6 bandgap reference[J ]. Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on 23 - 26 May 2005. vol. 4:3877 - 3880.
  • 5K. Lasanen,V. Korkola,E. Raisanen- Ruotsalainen. Design of a I-V low power CMOS bandgap reference based on resistive subdivision [J]. Circuits and Systems, 2002, MWSCAS- 2002. The 2002 45th Midwest Symposium on Volume 3,? 4 - 7 Aug. 2002 vol. 3: III - 564 - III - 567.
  • 6朱樟明,杨银堂.一种10-ppm/~oC低压CMOS带隙电压基准源设计[J].电路与系统学报,2004,9(4):118-120. 被引量:21

二级参考文献10

  • 1Tesch B J, Pratt P M, et al. 14-b 125 MSPS Digital-to-Analog Converter and Bandgap Voltage Reference in 0.5um CMOS [A]. Proc. Of the IEEE 1999 ISCAA'99 [C]. Orlando, FL, USA., 1998-06: 452-455.
  • 2Banba H, Siga H, Umezawa A, Miyaba T. A CMOS Bandgap Reference with Sub-1-V Operation [J]. IEEE Journal of Solid-State Circuits, 1999, 34(5): 670-674.
  • 3Boni Andrea. Op-Amps and Startup Circuits for CMOS Bandgap References With Near 1-V Supply [J]. IEEE Journal of Solid-State Circuits, 2002, 37(10): 1339-1342.
  • 4Gray P R, Meyer R G. Analysis and design of analog integrated circuits [M].4th ed. New York, Wiley. 2001. 317-327.
  • 5Banba H, Shiga H, Umezawa A, et al. A CMOS bandgap reference circuit with sub-1-V operation [J].IEEE J Sol Sta Circ, 1999, 34(5): 670-674.
  • 6Leung K N, Mok P K T. A sub-1-V 15 ppm / ℃ CMOS bandgap voltage reference without requiring low threshold voltage device [J].IEEE J Sol Sta Circ, 2002,37(4):526-530.
  • 7Malcovati P, Maloberti F, Pruzzi M, et al. Curvature compensated BiCMOS bandgap with 1-V supply vol-tage [A].Proc ESSCIRC [C].Stockholm, Sweden.2000.52-55.
  • 8Boni A. Op-amp and startup circuits for CMOS bandgap references with near 1-V supply [J].IEEE J Sol Sta Circ, 2002, 37(10): 1339-1343.
  • 9Tsividis Y. Accurate analysis of temperature effects in IC-Vbe characteristics with application to bandgap reference sources [J]. IEEE J Sol Sta Circ, 1980,15(12):1076-1084.
  • 10何捷,朱臻,王涛,李梦雄,洪志良.一种具有温度补偿、高电源抑制比的带隙基准源[J].复旦学报(自然科学版),2001,40(1):86-90. 被引量:26

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