摘要
设计了一款高精度、低电源电压的CMOS带隙基准源,具有良好的电源抑制比。电路采用电流模结构和反馈控制实现了低电压、低功耗和高电源抑制比。基于0.25μm CMOS工艺,测试结果表明:在1V电源电压下,1KHz频率时,电源抑制比约为80dB,在0-70℃温度范围内,输出电压变化率不超过0.3%。
A low power and high precision CMOS band- gap voltage reference circuit is presented with high power supply rejection ratio(PSRR). The proposed circuit uses a regulated current mode structure and feedback loop to reach a low voltage, low power and high PSRR voltage reference. Based on 0.25μm CMOS process, the measured results show that the PSRR is about 80dB at the frequency of 1KHz under the power supply of IV, and the output voltage variation versus temperature ranging from 0℃ to 70℃ is less than 0.3 %.
出处
《西安邮电学院学报》
2009年第1期53-56,共4页
Journal of Xi'an Institute of Posts and Telecommunications