一种基于CMOS工艺的掩模ROM设计

A mask ROM design based on CMOS technology

介绍了一种基于0.25μmCMOS工艺的128 Kbit掩模ROM设计,对ROM的结构和各模块进行了详细分析,研究了灵敏放大器的工作机理和结构,设计了一种新颖的灵敏放大器,使ROM的访问速度得到了有效的提高。

This paper introduces a design of a 128K bit mask CMOS ROM based on 0.25μm CMOS, and particularly analyses the structure of ROM. This article studies working mechanisms and the architecture of sensitive amplifier. Using a novel and simple sensitive amplifier structure efficiently reduces the memory access time.