SiCN扩散阻挡层薄膜的制备及特性研究

Preparation and properties of SiCN diffusion barrier film for Cu interconnect in ULSI

采用磁控溅射法在单晶硅衬底上制备了SiCN及Cu/SiCN薄膜,并对试样进行了退火处理。利用原子力显微镜(AFM)、X射线衍射(XRD)、四探针测试仪(FPP)研究了SiCN薄膜的表面形貌、物相结构及在Cu/SiCN/Si结构中SiCN薄膜对铜与硅的阻挡性能。结果表明,沉积态SiCN薄膜为无定型的非晶结构,晶化温度在1000℃以上;SiCN薄膜作为Cu的扩散阻挡层有较好的热稳定性及阻挡性,阻挡失效温度在600℃左右。

SiCN thin films and Cu/SiCN/Si structures were fabricated through magnetron sputtering. And the rapid thermal annealing（RTA） processing were undergoing for some thin-films samples. The thin-films surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy（AFM）, X-ray diffraction（XRD）, Alpha step IQ profiler and Four-point probe（FPP）. The results show that the as-deposited SiCN thin-films were amorphous structure, and their crystallization temperature is upon 1000℃. The Cu/SiCN/Si structure has a good thermal stability, and the SiCN thin-films are still able to prevent the diffusion reaction between Cu and Si interface after 5min RTA processing at 600℃.