非晶态 NiSiB 薄膜电阻的弛豫

Resistance Relexation of NiSiB Amorphous Films

用射频溅射制备了一组厚度不同的ＮｉＳｉＢ非晶态薄膜．在不同温度下，用不同时间对薄膜进行了循环退火．实验测量了循环退火后的薄膜电阻随温度的变化，得到可逆和不可逆两组曲线．厚度较大（＞１０００）的薄膜，电阻随温度的增加而增大，厚度较小（＜４００）的薄膜，电阻随温度的增加而减小．电阻温度系数有正有负．从非晶态材料的结构弛豫出发，应用激活能谱模型和推广的Ｚｉｍａｎ理论讨论了实验所得的结果．

A series of NiSiB films of various thickness were prepared by R.F.sputtering.The films were annealed at different temperature and for different time.The resistance of the annealed films were measured as a function of temperature during two or more heating cooling cycles.Measurements of annealed films showed that there were two forms of resistance versus temperature curves.One was reversible the other was irreversible.The resistance of the thicker films (>1000) increased with increasing temperature and the resistance of thinner films (<400) decreased with an increase in the temperature.The temperature coefficient of resistance may be positive or negative.From the relaxation of amorphous material these behaviours are disscussed based on the activation energy spectra and in terms of extatended Ziman theory for metallic glasses.